Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

December 2013FCP36N60N / FCPF36N60NTN-Channel SupreMOS MOSFET600 V, 36 A, 90 mFeatures Description RDS(on) = 81 m (Typ.) @ VGS = 10 V, ID = 18 A The SupreMOS MOSFET is Fairchild Semiconductors nextgeneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC)employing a deep trench filling process that differentiates it from

FCPF360N65S3R0LPower MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 10 A, 360 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This advanced technology is tailored to minimizeVDSS RDS(

November 2013FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

September 2014FCPF380N65FL1N-Channel SuperFET II FRFET MOSFET650 V, 10.2 A, 380 mFeatures Description 700 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 320 m (Typ.)charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

November 2013FCP380N60 / FCPF380N60N-Channel SuperFET II MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

July 2013FCPF380N60_F152N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mFeatures Description 650 V @TJ = 150C SuperFETII MOSFET is Fairchild Semiconductors first gener-ation of high voltage super-junction (SJ) MOSFET family that is Max. RDS(on) = 380 mutilizing charge balance technology for outstanding low on-resis- Ultra low gate charge (typ. Qg = 30

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FCPF380N65FL1FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF380N60FEATURESWith TO-220F packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RAT