FCPF36N60NT Specs and Replacement
Type Designator: FCPF36N60NT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 20
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 149
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
TO220F
-
MOSFET ⓘ Cross-Reference Search
FCPF36N60NT datasheet
..1. Size:953K onsemi
fcp36n60n fcpf36n60nt.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
8.1. Size:497K onsemi
fcpf360n65s3r0l.pdf 
FCPF360N65S3R0L Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(... See More ⇒
9.1. Size:624K fairchild semi
fcp380n60e fcpf380n60e.pdf 
November 2013 FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg... See More ⇒
9.2. Size:753K fairchild semi
fcpf380n65fl1.pdf 
September 2014 FCPF380N65FL1 N-Channel SuperFET II FRFET MOSFET 650 V, 10.2 A, 380 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 320 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = ... See More ⇒
9.3. Size:637K fairchild semi
fcp380n60 fcpf380n60.pdf 
November 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3... See More ⇒
9.4. Size:802K onsemi
fcp380n60e fcpf380n60e.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.5. Size:540K onsemi
fcp380n60 fcpf380n60.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.6. Size:290K onsemi
fcpf380n60 f152.pdf 
July 2013 FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s first gener- ation of high voltage super-junction (SJ) MOSFET family that is Max. RDS(on) = 380 m utilizing charge balance technology for outstanding low on-resis- Ultra low gate charge (typ. Qg = 30... See More ⇒
9.7. Size:201K inchange semiconductor
fcpf380n65fl1.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FCPF380N65FL1 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
9.8. Size:202K inchange semiconductor
fcpf380n60.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF380N60 FEATURES With TO-220F packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: FCP400N80Z
, FCP600N65S3R0
, FCPF165N65S3R0L
, FCPF190N60-F152
, FCPF190N65S3L1
, FCPF190N65S3R0L
, FCPF250N65S3R0L
, FCPF360N65S3R0L
, IRF9540
, FCPF380N60_F152
, FCPF600N60ZL1
, FCPF600N65S3R0L
, FCU360N65S3R0
, FCU600N65S3R0
, FDB0105N407L
, FDB0165N807L
, FDB0170N607L
.
History: 9N90L-TF1-T
Keywords - FCPF36N60NT MOSFET specs
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