Справочник MOSFET. PSMN1R8-30MLH

 

PSMN1R8-30MLH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN1R8-30MLH
   Маркировка: 1H830L
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 106 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.2 V
   Максимально допустимый постоянный ток стока |Id|: 150 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 35 nC
   Время нарастания (tr): 23 ns
   Выходная емкость (Cd): 1235 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0021 Ohm
   Тип корпуса: SOT1210

 Аналог (замена) для PSMN1R8-30MLH

 

 

PSMN1R8-30MLH Datasheet (PDF)

 ..1. Size:299K  nxp
 psmn1r8-30mlh.pdf

PSMN1R8-30MLH PSMN1R8-30MLH

PSMN1R8-30MLHN-channel 30 V, 2.1 m, 150 A logic level MOSFET inLFPAK33 using NextPowerS3 technology30 September 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 technology delivers low RDSon, low IDSS leakage and high efficiency. Rated to 150 Aand optimizedwith low gate resistance (RG) for fast-s

 4.1. Size:218K  philips
 psmn1r8-30pl.pdf

PSMN1R8-30MLH PSMN1R8-30MLH

PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 4.2. Size:814K  nxp
 psmn1r8-30pl.pdf

PSMN1R8-30MLH PSMN1R8-30MLH

PSMN1R8-30PLN-channel 30 V, 1.8 m logic level MOSFET in TO-220Rev. 02 2 November 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 4.3. Size:209K  nxp
 psmn1r8-30bl.pdf

PSMN1R8-30MLH PSMN1R8-30MLH

PSMN1R8-30BLN-channel 30 V, 1.8 m logic level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency du

 4.4. Size:261K  inchange semiconductor
 psmn1r8-30pl.pdf

PSMN1R8-30MLH PSMN1R8-30MLH

isc N-Channel MOSFET Transistor PSMN1R8-30PLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.5. Size:255K  inchange semiconductor
 psmn1r8-30bl.pdf

PSMN1R8-30MLH PSMN1R8-30MLH

isc N-Channel MOSFET Transistor PSMN1R8-30BLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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