Справочник MOSFET. NVATS5A112PLZ

 

NVATS5A112PLZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVATS5A112PLZ
   Маркировка: ATP112
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.6 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 27 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 33.5 nC
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
   Тип корпуса: ATPAK

 Аналог (замена) для NVATS5A112PLZ

 

 

NVATS5A112PLZ Datasheet (PDF)

 ..1. Size:859K  onsemi
 nvats5a112plz.pdf

NVATS5A112PLZ NVATS5A112PLZ

NVATS5A112PLZ Power MOSFET 60 V, 43 m, 27 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive www.onsemi.com applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 43 m @ 10 V 60

 5.1. Size:941K  onsemi
 nvats5a114plz.pdf

NVATS5A112PLZ NVATS5A112PLZ

NVATS5A114PLZ Power MOSFET 60 V, 16 m, 60 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance16 m @ 10 V High Current Capability60 V

 5.2. Size:823K  onsemi
 nvats5a113plz.pdf

NVATS5A112PLZ NVATS5A112PLZ

NVATS5A113PLZ Power MOSFET 60 V, 29.5 m, 38 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and www.onsemi.com including high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. VDSS RDS(on) Max ID Max Features Low On-Resistance 29.5 m @ 10 V High Current Capability

 6.1. Size:805K  onsemi
 nvats5a107plz.pdf

NVATS5A112PLZ NVATS5A112PLZ

NVATS5A107PLZ Power MOSFET 40 V, 17 m, 55 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features VDSS RDS(on) Max ID Max Low On-Resistance 17 m @ 10 V High Current Capability 40

 6.2. Size:781K  onsemi
 nvats5a106plz.pdf

NVATS5A112PLZ NVATS5A112PLZ

NVATS5A106PLZ Power MOSFET 40 V, 25 m, 33 A, P-Channel Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. www.onsemi.com AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications. Features Low On-Resistance VDSS RDS(on) Max ID Max High Current Capability 25 m @ 10 V

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History: AP4P016H

 

 
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