PJM2319PSA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PJM2319PSA
Маркировка: S19
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 4.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 76 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: SOT23
Аналог (замена) для PJM2319PSA
PJM2319PSA Datasheet (PDF)
pjm2319psa.pdf
PJM2319PSA P-Enhancement Field Effect TransistorSOT-23Features Fast Switching Ultra Low Qgd RDS(on) 80 m @V= -10VGS1. Gate 2.Source 3.DrainMarking: S19Application Schematic Diagram Load SwitchDrain DC/DC Converter31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter Symbol Value Unit D
pjm2301psa-s.pdf
PJM2301PSA-S P- Enhancement Mode Field Effect Transistor Features SOT-23 VDS= -20V I = -2AD R =120m (typ) @ V =-2.5VDS(ON) GSR =88m (typ) @ V =-4.5VDS(ON) GS High power and current handing capability Halogen and Antimony Free Surface mount package1. Gate 2.Source 3.DrainMarking : S01Drain 3 Applications Battery protection Load s
pjm2305psa.pdf
PJM2305PSAP-Channel Power MOSFETSOT-23Features Fast switching Low gate charge and RDS(ON) Low reverse transfer capacitances1. Gate 2.Source 3.Drain Marking: S5Application Schematic Diagram Load switch and in PWM applicatopnsDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Paramete
pjm2300nsa-l.pdf
PJM2300NSA-L N-Channel Enhancement Mode Power MOSFETFeatures SOT-23 Excellent R and Low Gate ChargeDS(ON) VDS= 20V I = 5.5A DR
pjm2309psc.pdf
PJM2309PSCP-Channel Power MOSFETSOT-23-3 Features VDS= -60V I = -4AD RDS(ON)= 180m(max) @-10V2 Halogen and Antimony Free31Applications1. Gate 2.Source 3.Drain Load Switch and in PWM ApplicationsMarking: Q9 Power ManagementSchematic DiagramDrain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.
pjm2302nsa.pdf
PJM2302NSAN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: M22 Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unless
pjm2301psa.pdf
PJM2301PSAP- Enhancement Mode Field Effect TransistorFeatures High power and current handing capabilitySOT-23 Halogen free product is acquired Surface mount package1. Gate 2.Source 3.DrainApplications Marking: M01 Battery protection Schematic Diagram Load switchDrain3 Power management1GateSource2Absolute Maximum Ratings Ratings at TA =25
pjm2302nsa-s.pdf
PJM2302NSA-SN- Enhancement Mode Field Effect TransistorSOT-23 Features Fast Switching Low Gate Charge and RDS(on) High power and current handing capabilityApplications Battery protection1. Gate 2.Source 3.DrainMarking: 22S Load switch Power managementSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TC = 25 unle
pjm2309psa.pdf
PJM2309PSAP-Channel Power MOSFETSOT-23Features VDS= -60V I = -2.0AD RDS(ON)= 200m(max) @-10V Halogen and Antimony Free1. Gate 2.Source 3.DrainApplicationsMarking: S9 Load Switch and in PWM ApplicationsSchematic Diagram Power Management Drain31GateSource2Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified.Parameter
pjm2300nsa.pdf
PJM2300NSA N-Channel MOSFETFeature SOT-23 TrenchFET Power MOSFET Excellent R and Low Gate ChargeDS(on)Applications 1. Gate 2.Source 3.Drain Load Switch for Portable DevicesMarking: M02 DC/DC ConverterSchematic diagram3Drain1Gate2SourceAbsolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Maximum Units
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