PJM3407PSA - аналоги, параметры транзистора - Справочник транзисторов

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PJM3407PSA P Enhancement Field Effect Transistor SOT-23 Features VDS=-30V, ID=-4.1A RDS(on)=50m (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge 1. Gate 2.Source 3.Drain Marking R7 Applications Schematic Diagram Load Switch and in PWM Applications Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless ot

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PJM3400NSA N- Enhancement Mode Field Effect Transistor SOT-23 Features VDS = 30V,ID = 5.8A RDS(ON)

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PJM3401PSC P-Channel Power MOSFET SOT-23-3 Features VDS= -30V I = -4.5A D RDS(ON)= 60m (max) @-10V 2 Halogen and Antimony Free 3 1 Applications 1. Gate 2.Source 3.Drain Load Switch and in PWM Applications Marking P1 Schematic Diagram Drain 3 1 Gate Source 2 Absolute Maximum Ratings Ratings at TA =25 unless otherwise specified. Parameter Symbol Valu

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PJM3401PSA P-Enhancement Field Effect Transistor Features SOT-23 High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent package for good heat dissipation 1. Gate 2.Source 3.Drain Marking R1 Applications Schematic Diagram Power switching application Drain 3 Hard switched and high frequency circuits Unint