Справочник MOSFET. OSG55R074HSZF

 

OSG55R074HSZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG55R074HSZF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 67.7 nC
   trⓘ - Время нарастания: 52.3 ns
   Cossⓘ - Выходная емкость: 348.5 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm
   Тип корпуса: TO247
     - подбор MOSFET транзистора по параметрам

 

OSG55R074HSZF Datasheet (PDF)

 ..1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:414K  oriental semi
 osg55r074hzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R074HSZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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History: PNMET20V06E | SPD04N60C3 | STW15NB50 | FDC654P

 

 
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