OSG55R074HSZF - описание и поиск аналогов

 

OSG55R074HSZF. Аналоги и основные параметры

Наименование производителя: OSG55R074HSZF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 278 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 550 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 52.3 ns

Cossⓘ - Выходная емкость: 348.5 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm

Тип корпуса: TO247

Аналог (замена) для OSG55R074HSZF

- подборⓘ MOSFET транзистора по параметрам

 

OSG55R074HSZF даташит

 ..1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:414K  oriental semi
 osg55r074hzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R074HSZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SCT2H12NZ , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA , UM5K1N , UT6MA3 , IRF2807 , OSG55R140HF , OSG55R160FZF , OSG60R180FF , OSG60R180PSF , OSG60R180FSF , OSG60R180ISF , OSG60R180HSF , OSG60R180KSF .

History: AOCA33103E

 

 

 

 

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