All MOSFET. OSG55R074HSZF Datasheet

 

OSG55R074HSZF Datasheet and Replacement


   Type Designator: OSG55R074HSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52.3 nS
   Cossⓘ - Output Capacitance: 348.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
   Package: TO247
 

 OSG55R074HSZF substitution

   - MOSFET ⓘ Cross-Reference Search

 

OSG55R074HSZF Datasheet (PDF)

 ..1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 4.1. Size:414K  oriental semi
 osg55r074hzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 5.1. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 6.1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R074HSZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

SHOW MORE

Datasheet: SCT2H12NZ , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA , UM5K1N , UT6MA3 , IRFB31N20D , OSG55R140HF , OSG55R160FZF , OSG60R180FF , OSG60R180PSF , OSG60R180FSF , OSG60R180ISF , OSG60R180HSF , OSG60R180KSF .

History: MTD2955VT4 | GE3401 | HFP70N06 | FIR7N65FG | APT1003RBFLLG | FDD5810-F085 | IRFR3410PBF

Keywords - OSG55R074HSZF MOSFET datasheet

 OSG55R074HSZF cross reference
 OSG55R074HSZF equivalent finder
 OSG55R074HSZF lookup
 OSG55R074HSZF substitution
 OSG55R074HSZF replacement

 

 
Back to Top

 


 
.