OSG55R074HSZF Datasheet. Specs and Replacement

Type Designator: OSG55R074HSZF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52.3 nS

Cossⓘ - Output Capacitance: 348.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm

Package: TO247

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OSG55R074HSZF datasheet

 ..1. Size:388K  oriental semi
 osg55r074hszf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di... See More ⇒

 4.1. Size:414K  oriental semi
 osg55r074hzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 5.1. Size:418K  oriental semi
 osg55r074fzf.pdf pdf_icon

OSG55R074HSZF

OSG55R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio... See More ⇒

 6.1. Size:398K  oriental semi
 osg55r070hf.pdf pdf_icon

OSG55R074HSZF

OSG55R070HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: SCT2H12NZ, SCT3080KL, SCT3080KLHR, SCT3120AL, SCT3160KL, SP8M24FRA, UM5K1N, UT6MA3, K4145, OSG55R140HF, OSG55R160FZF, OSG60R180FF, OSG60R180PSF, OSG60R180FSF, OSG60R180ISF, OSG60R180HSF, OSG60R180KSF

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