SWI088R06VT - аналоги, параметры транзистора - Справочник транзисторов

SWI088R06VT даташит

..1. Size:681K samwin
sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A

..2. Size:1012K samwin
swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SW088R06VT N-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 1 8 Low RDS(ON) (Typ 9.2m )@VGS=10V 2 7 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 6 3 5 4 Improved dv/dt Capability 9.2m @VGS=10V 100% Avalanche Tested 1 1 2 2 Applicati

9.1. Size:790K samwin
swi085r06vs.pdf pdf_icon

SW085R06VS N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS 60V High ruggedness ID 85A Low RDS(ON) (Typ 13m )@VGS=4.5V (Typ 9m )@VGS=10V RDS(ON) 13m @VGS=4.5V Low Gate Charge (Typ 19nC) 9m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application Synchronous Rectification, Li Battery Protect Board, Inverter 1.

Другие MOSFET... SWB038R10ES , SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SWK088R06VT , SI2302 , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K , SWF12N65D , SWU12N65D , SWP12N65D .