TF2302A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TF2302A
Маркировка: A2*
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 4 nC
trⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: SOT23
TF2302A Datasheet (PDF)
tf2302a.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302AN-Channel 20-V(D-S) MOSFETTF2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad
tf2302.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2302TF2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad
ixtf230n085t.pdf
Advance Technical InformationVDSS = 85 VIXTF230N085TTrenchMVTMID25 = 130 APower MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeISOPLUS i4-PakTM (5-lead) (IXTF)Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 85 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Tran
tf2301a.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301ATF2301A P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.085@-4.5V-20V -3.0A30.110@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA1 wAPPLICATIONL
tf2307.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2307TF2307 P-Channel 30-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.075@-10V-30V -3.5A30.095@-4.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA79TF wAPPLICATIONL
tf2305b.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2305BTF2305B P-Channel 16-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.060@-4.5V-16V -4.0A30.080@-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount packageA5BTF wAPPLICATION
tf2300.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSSMD Type ICSMD Type MOSFETTF2300N-Channel 20-V(D-S) MOSFETTF2300V(BR)DSS RDS(on)MAX IDSOT-230.025@10V31.GATE20V6.0A0.032@4.5V2.SOURCE3.DRAIN10.040@2.5V 2General FEATUREEquivalent CircuitMARKINGTrenchFET Power MOSFETLead free product is acquiredSurface
tf2306.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2306N-Channel 30-V(D-S) MOSFETTF2306V(BR)DSS RDS(on)MAX IDSOT-230.057@ 10V330V3.6 A1.GATE0.094@ 4.5 V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETEquivalent CircuitLead free product is acquiredMARKINGSurface mount packageA69TF wAPPLICATION
tf2301.pdf
SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2301TF2301 P-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.100@-4.5V-20V -2.8A30.130 @-2.5V1.GATE2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETMARKING Equivalent CircuitLead free product is acquiredSurface mount package-A1sHB wAPPLICATION
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918