IRFD9020 - Даташиты. Аналоги. Основные параметры

PD- 90462IRFD9020www.irf.com 106/09/05IRFD90202 www.irf.comIRFD9020www.irf.com 3IRFD90204 www.irf.comIRFD9020www.irf.com 5IRFD90206 www.irf.comIRFD9020Peak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +- dv/dt controlled by RG

IRFD9020, SiHFD9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* For Automatic InsertionQg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 175 C Opertaing TemperatureConfiguration Single Fast Switching

PD- 95922IRFD9024PbF Lead-Free10/27/04Document Number: 91137 www.vishay.com1IRFD9024PbFDocument Number: 91137 www.vishay.com2IRFD9024PbFDocument Number: 91137 www.vishay.com3IRFD9024PbFDocument Number: 91137 www.vishay.com4IRFD9024PbFDocument Number: 91137 www.vishay.com5IRFD9024PbFDocument Number: 91137 www.vishay.com6IRFD9024PbFPeak Diode R

IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature

IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature