SM4812PRL30V /6A Dual 2N Power MOSFET C B03C B 30V /6A Dual 2N Power MOSFET 6B03CGeneral Description 30 VV DS30V /6A Dual 2N Power MOSFET 29.4 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 46.2 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM4812PR

SSM4816SMDUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODES1/D2Simple drive requirement MOSFET-1 BVDSS 30VS1/D2S1/D2Suitable for DC-DC Converters R 22mDS(ON)D1Fast switching performance ID 6.7AG2MOSFET-2 BV 30VS2/ADSSS2/ASO-8R 13mG1DS(ON)Description ID 11.5AAdvanced Power MOSFETs from Silicon Standard provide D1the designer with the best combination of fa

SM481830V Dual N-channel MOSFETP-Channel Enhancement-Mode MOSFETDescription Top ViewThe SM4818 uses advanced trench technology to provideS2 1 8 D2excellent RDS(ON) and low gate charge. This device isG2 D227suitable for use as a load switch or in PWM applications.S1 3 6 D1G1 4 5 D1SOIC-8General Features DDVDS30V (at VGS=10V) 8AID (at VGS=10V)