20N3LG-TO251 - описание и поиск аналогов

20N3LG TO251 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) Qg (Typ.) ID (A) TrenchFET Gen III Power MOSFET 0.07 at VGS = 10 V 53 100 % Rg Tested RoHS 30 19 nC COMPLIANT 100 % UIS Tested 0.09 at VGS = 4.5 V 48 APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D S

STL220N3LLH7 N-channel 30 V, 0.00081 typ., 50 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID STL220N3LLH7 30 V 0.0011 50 A Very low on-resistance 1 Very low Qg 2 3 4 High avalanche ruggedness PowerFLAT 5x6 Applications Switching applications Description Figure

STS20N3LLH6 N-channel 30 V, 0.004 , 20 A, SO-8 STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STS20N3LLH6 30 V 0.0047 20 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Application Switching applications Figur

IPB110N20N3LF MOSFET D PAK OptiMOSTM 3 Linear FET, 200 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain

Isc N-Channel MOSFET Transistor IPB110N20N3LF FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source