30P06 - описание и поиск аналогов

30P06 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symb

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP30P06V/D Designer's Data Sheet MTP30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 30 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB30P06V/D Designer's Data Sheet MTB30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 30 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.080 OHM tance area product abou

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP30P06V/D Designer's Data Sheet MTP30P06V TMOS V Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 30 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS new

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

SPD30P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.075 Avalanche rated Continuous drain current ID -30 A dv/dt rated 175 C operating temperature Pb-free lead plating; RoHS compliat Qualified according to AEC Q101 Pin 1 PIN 2/4 PIN 3 G D S Type Package S

MTB30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel D2PAK This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

MTP30P06V Preferred Device Power MOSFET 30 Amps, 60 Volts P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the http //onsemi.com avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power 30 AMPERES, 60 VOLTS motor controls, these devices are particularly well suited for bridge RDS(on)

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Preliminary Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and hi

UNISONIC TECHNOLOGIES CO., LTD UTT30P06 Power MOSFET -60V, -30A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT30P06 is suitable for low voltage and high speed

RFG30P06, RFP30P06, S E M I C O N D U C T O R RF1S30P06, RF1S30P06SM 30A, 60V, Avalanche Rated, P-Channel March 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 30A, 60V SOURCE rDS(ON) = 0.065 DRAIN GATE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse WIdth Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC Op

Analog Power AM30P06-40D P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 40 @ VGS = -10V -29 Low thermal impedance -60 55 @ VGS = -4.5V -25 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAX

Analog Power AM30P06-45D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management 49 @ VGS = -10V 28 circuitry. Typical applications are PWM DC-DC -60 converters, power management

Spec. No. C796J3 Issued Date 2012.06.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB30P06J3 ID -24A RDS(ON)@VGS=-10V, ID=-20A 28m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 33m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free packag

BRD30P06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS =- 60V,ID =-26A RDS(ON)

MSD30P06 P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cord

Pb Free Product http //www.ncepower.com NCE30P06J NCE P-Channel Enhancement Mode Power MOSFET Description D The NCE30P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diag

WSF30P06 P-Ch MOSFET General Description Product Summery The WSF30P06 is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -60V 38m -23.5A gate charge for most of the synchronous buck converter applications . Applications The WSF30P06 meet the RoHS and Green Product requirement , 100% EAS High F

RFP30P06 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0600 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.0850 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S TO-220AB Power Swi

SPD30P06PG www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge C

AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS D R