APM2701ACC-TRG - аналоги, параметры транзистора

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APM2701ACC-TRG www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.08

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APM2701AC Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, D2 S1 RDS(ON)=50m (typ.) @ VGS=4.5V D1 G2 RDS(ON)=65m (typ.) @ VGS=2.5V S2 G1 P-Channel -20V/-2A, Top View of SOT-23-6 RDS(ON)=90m (typ.) @ VGS=-4.5V (4)D2 RDS(ON)=130m (typ.) @ VGS=-2.5V (6)D1 Reliable and Rugged Lead Free and Green Devices Available (

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APM2701AC www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at

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SMD Type MOSFET SMD Type TrMOSFET SMDType SMDType SMDType r SMDType IC SMD Type IC SMD Type oIC SMD Type ansistICs Product specification KDS3601 Features 1.3 A, 100 V. RDS(ON) = 480m @VGS =10 V RDS(ON) = 530m @VGS =6V Low gate charge (3.7 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Abs

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