STU428S datasheet, подбор замены

 ..1. Size:94K  samhop
 stu428s std428s.pdf 

S TU/D428S S amHop Microelectronics C orp. Mar.8,2007 N-Channel Logic Level E nhancement Mode Field E ffect Transistor FEATUR ES PR ODUCT S UMMAR Y S uper high dense cell design for low R DS (ON). Typ VDS S ID R DS (ON) ( m ) R ugged and reliable. 8 @ VGS =10V Surface Mount Package. 40V 50A 10 @ VGS =4.5V ESD Protected. D D G G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-

 9.1. Size:113K  samhop
 stu426s std426s.pdf 

S TU/D426S S amHop Microelectronics C orp. Oct,2007 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUCT S UMMAR Y FEATUR ES S uper highdense cell design for lowR DS (ON). Typ VDS S ID R DS (ON) ( m ) R ugged and reliable. 8 @ VGS =10V 40V 53A TO-252 and TO-251 Package. 10 @ VGS =4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK)

 9.2. Size:119K  samhop
 stu421s std421s.pdf 

Green Product STU/D421S SamHop Microelectronics Corp. Aug.20,2006 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES RDS(ON) ( m ) Max VDSS ID Super high dense cell design for low RDS(ON). Rugged and reliable. 45 @ VGS = -10V -40V -10A TO-252 and TO-251 Package. 60 @ VGS = -4.5V D D D G G G S S STU SERIES STD SERIES TO-252AA(D-PAK)

 9.3. Size:91K  samhop
 stu420s std420s.pdf 

S TU/D420S S amHop Microelectronics C orp. July 05,2006 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 24 @ VGS = 10V 24A 40V TO-252 and TO-251 Package. 30 @ VGS =4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PA