Справочник MOSFET. IRF7413TRPBF

 

IRF7413TRPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7413TRPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012(typ) Ohm
   Тип корпуса: SO8

 Аналог (замена) для IRF7413TRPBF

 

 

IRF7413TRPBF Datasheet (PDF)

 ..1. Size:1671K  cn vbsemi
irf7413trpbf.pdf

IRF7413TRPBF
IRF7413TRPBF

IRF7413TRPBFwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

 7.1. Size:123K  international rectifier
irf7413.pdf

IRF7413TRPBF
IRF7413TRPBF

PD- 91330FIRF7413SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max(mW) IDApplicationsl High frequency DC-DC converters30V 11@VGS = 10V 12ABenefitsAAl Low Gate to Drain Charge to Reduce 1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6SEffective COSS to Simplify Design, (See DApp. Note AN1001) 45G Dl Fully Characterized Avalan

 7.2. Size:258K  international rectifier
irf7413pbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil

 7.3. Size:257K  international rectifier
irf7413qpbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 96112IRF7413QPbFHEXFET Power MOSFETAl Advanced Process TechnologyA1 8S Dl Ultra Low On-Resistance2 7l N Channel MOSFETS D VDSS = 30Vl Surface Mount3 6S Dl Available in Tape & Reel4 5l 150C Operating TemperatureG DRDS(on) = 0.011l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applications,

 7.4. Size:284K  international rectifier
irf7413zpbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS

 7.5. Size:116K  international rectifier
irf7413a.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 9.1613AIRF7413APRELIMINARYHEXFET Power MOSFETA Generation V TechnologyA1 8S D Ultra Low On-Resistance2 7 N-Channel Mosfet VDSS = 30VS D Surface Mount3 6S D Available in Tape & Reel4 5G D Dynamic dv/dt RatingRDS(on) = 0.0135 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing

 7.6. Size:227K  international rectifier
irf7413pbf-1.pdf

IRF7413TRPBF
IRF7413TRPBF

IRF7413PbF-1HEXFET Power MOSFETAVDS 30 V A1 8S DRDS(on) max 0.011 2 7S D(@V = 10V)GS3 6Qg (typical) 52 nCS DID 45G D13 A(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme

 7.7. Size:259K  international rectifier
irf7413gpbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 96250IRF7413GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-Freel Halogen-FreeTop ViewDescriptionFifth Generation HEXFETs from International

 7.8. Size:286K  international rectifier
irf7413zgpbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 96249IRF7413ZGPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5l Ultra-Low Gate ImpedanceG Dl Very Low RDS(on)

 7.9. Size:258K  infineon
irf7413pbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 95017CIRF7413PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance AA1 8l N-Channel MosfetS Dl Surface Mount2 7S D VDSS = 30Vl Available in Tape & Reell Dynamic dv/dt Rating 3 6S Dl Fast Switching4 5G Dl 100% RG TestedRDS(on) = 0.011l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutil

 7.10. Size:284K  infineon
irf7413zpbf.pdf

IRF7413TRPBF
IRF7413TRPBF

PD - 95335DIRF7413ZPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Control FET for Notebook Processor10m @VGS = 10VPower 30V 13Al Control and Synchronous RectifierMOSFET for Graphics Cards and POLAConverters in Computing, NetworkingA1 8S Dand Telecommunication Systems2 7S D3 6S DBenefits4 5G Dl Ultra-Low Gate ImpedanceSO-8l Very Low RDS

 7.11. Size:1818K  kexin
irf7413.pdf

IRF7413TRPBF
IRF7413TRPBF

SMD Type MOSFETN-Channel MOSFETIRF7413 (KRF7413)SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V)1 8S D1 Source 5 Drain2 7S D6 Drain2 Source3 67 DrainS D 3 Source8 Drain4 Gate45G DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

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