IRF7413TRPBF Datasheet. Specs and Replacement

Type Designator: IRF7413TRPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm

Package: SO8

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IRF7413TRPBF substitution

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IRF7413TRPBF datasheet

 ..1. Size:1671K  cn vbsemi
irf7413trpbf.pdf pdf_icon

IRF7413TRPBF

IRF7413TRPBF www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒

 7.1. Size:123K  international rectifier
irf7413.pdf pdf_icon

IRF7413TRPBF

PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalan... See More ⇒

 7.2. Size:258K  international rectifier
irf7413pbf.pdf pdf_icon

IRF7413TRPBF

PD - 95017C IRF7413PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier util... See More ⇒

 7.3. Size:257K  international rectifier
irf7413qpbf.pdf pdf_icon

IRF7413TRPBF

PD - 96112 IRF7413QPbF HEXFET Power MOSFET A l Advanced Process Technology A 1 8 S D l Ultra Low On-Resistance 2 7 l N Channel MOSFET S D VDSS = 30V l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.011 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,... See More ⇒

Detailed specifications: IRF7341TRPBF, IRF7342QTR, IRF7342TR, IRF7343QTR, IRF7343TRPBF, IRF7379TR, IRF7404TR, IRF7410TR, IRF520, IRF7416TRPBF, IRF7424TRPBF, IRF7425TR, IRF7455TR, IRF7463TR, IRF7467TR, IRF7468TR, IRF7469TR

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