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IRFR120NTRPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR120NTRPBF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 96 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 15 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 24 nC
   Время нарастания (tr): 50 ns
   Выходная емкость (Cd): 120 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.114(typ) Ohm
   Тип корпуса: TO252

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IRFR120NTRPBF Datasheet (PDF)

 ..1. Size:764K  cn vbsemi
irfr120ntrpbf.pdf

IRFR120NTRPBF IRFR120NTRPBF

IRFR120NTRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RAT

 6.1. Size:390K  international rectifier
irfr120npbf irfu120npbf.pdf

IRFR120NTRPBF IRFR120NTRPBF

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

 6.2. Size:142K  international rectifier
irfr120n.pdf

IRFR120NTRPBF IRFR120NTRPBF

PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. T

 6.3. Size:390K  infineon
irfr120npbf irfu120npbf.pdf

IRFR120NTRPBF IRFR120NTRPBF

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

 6.4. Size:241K  inchange semiconductor
irfr120n.pdf

IRFR120NTRPBF IRFR120NTRPBF

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120NFEATURESStatic drain-source on-resistance:RDS(on)210mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

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