FDA50N50 - аналоги, параметры транзистора - Справочник транзисторов

FDA50N50 даташит

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fdh50n50 f133 fda50n50.pdf pdf_icon

October 2008 TM UniFET FDH50N50_F133 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

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fdh50n50 fda50n50.pdf pdf_icon

TM UniFET FDH50N50 / FDA50N50 500V N-Channel MOSFET Features Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 105 nC) DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored t

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fda50n50.pdf pdf_icon

isc N-Channel MOSFET Transistor FDA50N50 FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate

Другие MOSFET... FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , IRFP064N , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 .