FDA50N50 Datasheet and Replacement
Type Designator: FDA50N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO3PN
FDA50N50 substitution
FDA50N50 Datasheet (PDF)
fdh50n50 f133 fda50n50.pdf

October 2008TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es
fdh50n50 fda50n50.pdf

TMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored t
fda50n50.pdf

isc N-Channel MOSFET Transistor FDA50N50FEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate
Datasheet: FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , 5N50 , FDA59N25 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 .
History: IRF7478
Keywords - FDA50N50 MOSFET datasheet
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History: IRF7478



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