All MOSFET. FDA50N50 Datasheet

 

FDA50N50 Datasheet and Replacement


   Type Designator: FDA50N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 48 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO3PN
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FDA50N50 Datasheet (PDF)

 ..1. Size:540K  fairchild semi
fdh50n50 f133 fda50n50.pdf pdf_icon

FDA50N50

October 2008TMUniFETFDH50N50_F133 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been es

 ..2. Size:223K  onsemi
fdh50n50 fda50n50.pdf pdf_icon

FDA50N50

TMUniFETFDH50N50 / FDA50N50 500V N-Channel MOSFETFeatures Description 48A, 500V, RDS(on) = 0.105 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 105 nC)DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored t

 ..3. Size:215K  inchange semiconductor
fda50n50.pdf pdf_icon

FDA50N50

isc N-Channel MOSFET Transistor FDA50N50FEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate

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History: IRL530PBF | HLML6401 | SI2303 | NVH4L160N120SC1 | NDB5060L | TSM40N03PQ33 | AP85T03GH-HF

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