SI3911DV-T1 - параметры транзистора MOSFET, его аналоги, datasheet

SI3911DV-T1 Datasheet (PDF)

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SI3911DV-T1www.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable

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Si3911DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.145 at VGS = - 4.5 V - 2.2 TrenchFET Power MOSFETs: 1.8 V Rated 0.200 at VGS = - 2.5 V - 20 - 1.8 Compliant to RoHS Directive 2002/95/EC0.300 at VGS = - 1.8 V - 1.5TSOP-6 S1 S2Top ViewG1 D

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Si3915DVNew ProductVishay SiliconixDual P-Channel 12-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.120 @ VGS = 4.5 V 2.512120.175 @ VGS = 2.5 V 2.00.240 @ VGS = 1.8 V 1.7S1 S2TSOP-6Top ViewG1 D11 6G1 G23 mm S2 S152G2 D23 42.85 mm D1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHE

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