SM4927BSKC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SM4927BSKC
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8.3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 32 nC
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 215 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021(typ) Ohm
Тип корпуса: SO8
Аналог (замена) для SM4927BSKC
SM4927BSKC Datasheet (PDF)
sm4927bskc.pdf
SM4927BSKCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18
sm4927bsk.pdf
SM4927BSKDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 -30V/-8.9A,D2D2RDS(ON)=21m (max.) @ VGS=-10VRDS(ON)=35m (max.) @ VGS=-4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP 8 HBM ESD protection level pass 2KV(8) (7) (6) (5)D1 D1 D2 D2Note : The diode connected between the gat
tsm4925dcs.pdf
TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati
gsm4924.pdf
40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma
gsm4925ws.pdf
GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite
gsm4925.pdf
GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo
gsm4924w.pdf
GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S
gsm4925s.pdf
GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
gsm4925w.pdf
GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
gsm4922w.pdf
GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
ssm4924gm.pdf
SSM4924GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20VD2D2D1Lower gate charge R RDS(ON) 35mD1Fast switching characteristicsI 6AIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice desig
ssm4920m.pdf
SSM4920MN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple Drive Requirement BV 25VDSSD2 D2Low On-resistance R 25mD1 DS(ON)D1Fast Switching I 7ADG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and cost- G1effectiveness.S1S2
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