FDB070AN06A0 - описание и поиск аналогов

March 2003 FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 6.1m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

FDB070AN06A0-F085 N-Channel PowerTrench MOSFET 60V, 80A, 7m Features Applications r = 6.1m (Typ.), V = 10V, I = 80A DS(ON) GS D Motor / Body Load Control Q = 51nC (Typ.), V = 10V g(tot) GS ABS Systems Low Miller Charge Pow ertrain Management Low Q Body Diode RR Injection Systems UIS Capability (Single Pulse and Repetitive

May 2012 FDB070AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 80A, 7m Features Applications rDS(ON) = 6.1m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC c

October 2013 FDB075N15A_F085 N-Channel Power Trench MOSFET 150V, 110A, 7.5m D D Features Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta

October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5m Features Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge s

March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench MOSFET 150 V, 130 A, 7.5 m Features Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching lored to minimize the on-state resistance while maintaining Low Gate Charge

FDB075N15A-F085 N-Channel Power Trench MOSFET D D 150V, 110A, 7.5m Features G Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G S UIS Capability TO-263 S RoHS Compliant FDB SERIES Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator

Isc N-Channel MOSFET Transistor FDB075N15A FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo