FDB070AN06A0 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDB070AN06A0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 175 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 51 nC
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO263_D2PAK
FDB070AN06A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDB070AN06A0 Datasheet (PDF)
1.1. fdb070an06a0 fdp070an06a0.pdf 
Size:599K _fairchild_semi
March 2003 FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7m? Features Applications rDS(ON) = 6.1m? (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Of
1.2. fdb070an06 f085.pdf Size:726K _fairchild_semi
May 2012 FDB070AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ Features Applications • rDS(ON) = 6.1mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c
5.1. fdb075n15a f085.pdf Size:362K _fairchild_semi
October 2013 FDB075N15A_F085 N-Channel Power Trench® MOSFET 150V, 110A, 7.5mΩ D D Features Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta
5.2. fdp075n15a f102 fdb075n15a.pdf Size:312K _fairchild_semi
October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ Features Description • RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has • Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc
5.3. fdp075n15a fdb075n15a.pdf Size:698K _fairchild_semi
December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Fast Switching lored to minimize the on-state resistance while maintaining • Low Gate Charge s
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
