All MOSFET. FDB070AN06A0 Datasheet

 

FDB070AN06A0 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB070AN06A0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 175 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 51 nC

Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm

Package: TO263, D2PAK

FDB070AN06A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB070AN06A0 Datasheet (PDF)

1.1. fdb070an06a0 fdp070an06a0.pdf Size:599K _fairchild_semi

FDB070AN06A0 FDB070AN06A0

March 2003 FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7m? Features Applications rDS(ON) = 6.1m? (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 51nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Of

1.2. fdb070an06 f085.pdf Size:726K _fairchild_semi

FDB070AN06A0 FDB070AN06A0

May 2012 FDB070AN06A0_F085 N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ Features Applications • rDS(ON) = 6.1mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode • Injection Systems • UIS Capability (Single Pulse and Repetitive Pulse) • DC-DC c

 5.1. fdp075n15a f102 fdb075n15a.pdf Size:312K _fairchild_semi

FDB070AN06A0 FDB070AN06A0

October 2012 FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ Features Description • RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has • Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

5.2. fdb075n15a f085.pdf Size:362K _fairchild_semi

FDB070AN06A0 FDB070AN06A0

October 2013 FDB075N15A_F085 N-Channel Power Trench® MOSFET 150V, 110A, 7.5mΩ D D Features Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta

 5.3. fdp075n15a fdb075n15a.pdf Size:698K _fairchild_semi

FDB070AN06A0 FDB070AN06A0

December 2013 FDP075N15A / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.5 mΩ Features Description • RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Fast Switching lored to minimize the on-state resistance while maintaining • Low Gate Charge s

Datasheet: STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0_F085 , FDB047N10 , STU405DH , FDB050AN06A0 , FDB060AN08A0 , RFP50N06 , FDB075N15A , FDB082N15A , FDB088N08 , FDB110N15A , FDB120N10 , STU407DH , FDB12N50F , FDB12N50TM .

 

 
Back to Top