FDB14N30 - аналоги, параметры транзистора - Справочник транзисторов

FDB14N30 даташит

..1. Size:445K fairchild semi
fdb14n30.pdf pdf_icon

February 2007 TM UniFET FDB14N30 300V N-Channel MOSFET Features Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 18 nC) stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored

9.1. Size:247K fairchild semi
fdb14an06la0 fdp14an06la0.pdf pdf_icon

January 2004 FDB14AN06LA0 / FDP14AN06LA0 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pu

9.2. Size:300K fairchild semi
fdb14an06l f085.pdf pdf_icon

December 2010 FDB14AN06LA0_F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

9.3. Size:784K onsemi
fdb14an06la0-f085.pdf pdf_icon

FDB14AN06LA0-F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6m Features Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conver

Другие MOSFET... FDB110N15A , FDB120N10 , STU407DH , FDB12N50F , FDB12N50TM , FDB12N50U , FDB13AN06A0 , FDB14AN06LA0F085 , STP75NF75 , FDB150N10 , STU408D , FDB15N50 , FDB2532 , FDB2532F085 , FDB2552 , FDB2572 , FDB2614 .