FDB14N30 - параметры транзистора MOSFET, его аналоги, datasheet

FDB14N30 Datasheet (PDF)

..1. Size:445K fairchild semi
fdb14n30.pdf pdf_icon

February 2007TMUniFETFDB14N30 300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especially tailored

9.1. Size:247K fairchild semi
fdb14an06la0 fdp14an06la0.pdf pdf_icon

January 2004FDB14AN06LA0 / FDP14AN06LA0N-Channel PowerTrench MOSFET60V, 60A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pu

9.2. Size:300K fairchild semi
fdb14an06l f085.pdf pdf_icon

December 2010FDB14AN06LA0_F085 N-Channel PowerTrench MOSFET60V, 60A, 14.6mFeatures Applications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

9.3. Size:784K onsemi
fdb14an06la0-f085.pdf pdf_icon

FDB14AN06LA0-F085 N-Channel PowerTrench MOSFET 60V, 60A, 14.6mFeaturesApplications rDS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60A Motor / Body Load Control Qg(tot) = 24nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conver

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