Справочник MOSFET. VBE1158N

 

VBE1158N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VBE1158N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 30 W
   Предельно допустимое напряжение сток-исток |Uds|: 150 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 25.4 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 28.5 nC
   Время нарастания (tr): 12 ns
   Выходная емкость (Cd): 160 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.074(typ) Ohm
   Тип корпуса: TO252

 Аналог (замена) для VBE1158N

 

 

VBE1158N Datasheet (PDF)

 ..1. Size:699K  cn vbsemi
 vbe1158n.pdf

VBE1158N VBE1158N

VBE1158Nwww.VBsemi.comN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

 9.1. Size:827K  cn vbsemi
 vbe1101m.pdf

VBE1158N VBE1158N

VBE1101Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

 9.2. Size:979K  cn vbsemi
 vbe1101n.pdf

VBE1158N VBE1158N

VBE1101Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 100 % Rg Tested0.0075 at VGS = 10 V85100 100 % UIS Tested0.0095 at VGS = 4.5 V75APPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252 D G G D S S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25

 9.3. Size:1248K  cn vbsemi
 vbe1104n.pdf

VBE1158N VBE1158N

VBE1104Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

 9.4. Size:526K  cn vbsemi
 vbe1102n.pdf

VBE1158N VBE1158N

VBE1102Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless o

 9.5. Size:651K  cn vbsemi
 vbe1105.pdf

VBE1158N VBE1158N

VBE1105www.VBsemi.comN-Channel 100V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS100 0.005 at VGS = 10 V100aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

 9.6. Size:908K  cn vbsemi
 vbe1106n.pdf

VBE1158N VBE1158N

VBE1106Nwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % UIS tested0.055 at VGS = 10 V 250.057 at VGS = 4.5 V 100 25 21nC0.070 at VGS = 2.5 V 18APPLICATIONS Primary side switchDTO-252GG D SSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unle

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top