VBL1101N - описание и поиск аналогов

 ..1. Size:1080K  cn vbsemi
 vbm1101n vbl1101n.pdf 

VBM1101N/VBL1101N www.VBsemi.com N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0085 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 85 0.0100 at VGS = 6 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S Top View N-Ch

 ..2. Size:890K  cn vbsemi
 vbl1101n.pdf 

VBL1101N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.010 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 85 D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwis

 7.1. Size:1009K  cn vbsemi
 vbl1101m.pdf 

VBL1101M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.100 at VGS = 10 V 100 20 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXI

 8.1. Size:1796K  cn vbsemi
 vbl1104n.pdf 

VBL1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

 8.2. Size:619K  cn vbsemi
 vbl1105.pdf 

VBL1105 www.VBsemi.com N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) New Package with Low Thermal Resistance 100 0.005 at VGS = 10 V 110a 100 % Rg Tested D D2PAK (TO-263) G D S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Sour