Справочник MOSFET. VBQA1302

 

VBQA1302 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VBQA1302
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 171 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 1725 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018(typ) Ohm
   Тип корпуса: DFN5X6

 Аналог (замена) для VBQA1302

 

 

VBQA1302 Datasheet (PDF)

 ..1. Size:476K  cn vbsemi
vbqa1302.pdf

VBQA1302
VBQA1302

VBQA1302www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLUTE MA

 7.1. Size:947K  cn vbsemi
vbqa1308.pdf

VBQA1302
VBQA1302

VBQA1308www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S

 7.2. Size:523K  cn vbsemi
vbqa1303.pdf

VBQA1302
VBQA1302

VBQA1303www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.003 at VGS = 10 V 80APPLICATIONS30 71 nC0.005 at VGS = 4.5 V 70 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABS

 9.1. Size:1042K  cn vbsemi
vbqa1102n.pdf

VBQA1302
VBQA1302

VBQA1102Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.017 at VGS = 10 V10030COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDDFN5X6Top ViewTop View Bottom View1827G364

 9.2. Size:935K  cn vbsemi
vbqa1402.pdf

VBQA1302
VBQA1302

VBQA1402www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET40 38 nC0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Synchronous Rectification Secondary Side DC/DC

 9.3. Size:540K  cn vbsemi
vbqa1405.pdf

VBQA1302
VBQA1302

VBQA1405www.VBsemi.comN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETA

 9.4. Size:517K  cn vbsemi
vbqa1606.pdf

VBQA1302
VBQA1302

VBQA1606www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

 9.5. Size:878K  cn vbsemi
vbqa1638.pdf

VBQA1302
VBQA1302

VBQA1638www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYAvailableVDS (V) 60 TrenchFET Power MOSFETRDS(on) max. () at VGS = 10 V 0.024 100 % Rg TestedRDS(on) max. () at VGS = 4.5 V 0.028 100 % UIS TestedQg typ. (nC) 5.2ID (A) 15a, gAPPLICATIONSConfiguration Single Battery Switch

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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