Справочник MOSFET. NCE3080K

 

NCE3080K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE3080K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 460 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCE3080K

 

 

NCE3080K Datasheet (PDF)

 ..1. Size:384K  ncepower
 nce3080k.pdf

NCE3080K NCE3080K

Pb Free Producthttp://www.ncepower.com NCE3080KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 0.1. Size:495K  ncepower
 nce3080ka.pdf

NCE3080K NCE3080K

Pb Free Producthttp://www.ncepower.com NCE3080KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 0.2. Size:840K  cn vbsemi
 nce3080ka.pdf

NCE3080K NCE3080K

NCE3080KAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABS

 7.1. Size:312K  ncepower
 nce3080i.pdf

NCE3080K NCE3080K

Pb Free Producthttp://www.ncepower.com NCE3080INCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.2. Size:321K  ncepower
 nce3080l.pdf

NCE3080K NCE3080K

Pb Free Producthttp://www.ncepower.com NCE3080LNCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

 7.3. Size:296K  ncepower
 nce3080ia.pdf

NCE3080K NCE3080K

Pb Free Producthttp://www.ncepower.com NCE3080IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top