NCE55P15I. Аналоги и основные параметры

Наименование производителя: NCE55P15I

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 145 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm

Тип корпуса: TO251

Аналог (замена) для NCE55P15I

- подборⓘ MOSFET транзистора по параметрам

 

NCE55P15I даташит

 ..1. Size:362K  ncepower
 nce55p15i.pdf pdf_icon

NCE55P15I

Pb Free Product http //www.ncepower.com NCE55P15I NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 6.1. Size:311K  ncepower
 nce55p15.pdf pdf_icon

NCE55P15I

Pb Free Product http //www.ncepower.com NCE55P15 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 6.2. Size:467K  ncepower
 nce55p15k.pdf pdf_icon

NCE55P15I

Pb Free Product http //www.ncepower.com NCE55P15K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 8.1. Size:392K  ncepower
 nce55p04s.pdf pdf_icon

NCE55P15I

Pb Free Product http //www.ncepower.com NCE55P04S NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE55P04S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-55V,ID =-4A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

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