NCE65TF130F. Аналоги и основные параметры
Наименование производителя: NCE65TF130F
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO220F
Аналог (замена) для NCE65TF130F
- подборⓘ MOSFET транзистора по параметрам
NCE65TF130F даташит
nce65tf130f.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind
nce65tf130f nce65tf130 nce65tf130d.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind
nce65tf130d nce65tf130 nce65tf130f.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion,
nce65tf130t.pdf
NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
Другие IGBT... NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130, IRFB4115, NCE65TF180D, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D, NCE65TF360, NCE65TF360F, NCE6802
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Список транзисторов
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