All MOSFET. NCE65TF130F Datasheet

 

NCE65TF130F Datasheet and Replacement


   Type Designator: NCE65TF130F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220F
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NCE65TF130F Datasheet (PDF)

 ..1. Size:1828K  ncepower
 nce65tf130f.pdf pdf_icon

NCE65TF130F

NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind

 ..2. Size:1828K  ncepower
 nce65tf130f nce65tf130 nce65tf130d.pdf pdf_icon

NCE65TF130F

NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind

 ..3. Size:623K  ncepower
 nce65tf130d nce65tf130 nce65tf130f.pdf pdf_icon

NCE65TF130F

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,

 4.1. Size:423K  1
 nce65tf130t.pdf pdf_icon

NCE65TF130F

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SI2323DDS-T1-GE3 | 2SK4096LS | WML11N80M3 | STP75NF75FP | IXFT12N50F | PJA3412 | UT8205A

Keywords - NCE65TF130F MOSFET datasheet

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