NCE65TF180D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65TF180D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 188 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 21 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 36 nC
Время нарастания (tr): 6 ns
Выходная емкость (Cd): 83 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.199 Ohm
Тип корпуса: TO263
Аналог (замена) для NCE65TF180D
NCE65TF180D Datasheet (PDF)
nce65tf180d nce65tf180 nce65tf180f.pdf
NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion
nce65tf180t.pdf
NCE65TF180T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl
nce65tf130t.pdf
NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
nce65tf130d nce65tf130 nce65tf130f.pdf
NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: 2SK2049 | MT6JN009A | MT6JN008A | MT40N20A | MT28N20A | MT20N024A | MT06N020AL | MT06N020A | MT06N005A | MT04N005AL | MT04N004B | MT03N03FAL | MS65R620RR | MS65R620RF | MS65R600R | MS65R600F