NCE65TF180D Datasheet. Specs and Replacement

Type Designator: NCE65TF180D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 83 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm

Package: TO263

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NCE65TF180D datasheet

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NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAX with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion,... See More ⇒

 ..2. Size:1721K  ncepower
 nce65tf180d.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and i... See More ⇒

 ..3. Size:618K  ncepower
 nce65tf180d nce65tf180 nce65tf180f.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion... See More ⇒

 4.1. Size:1721K  ncepower
 nce65tf180f.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 180 m DS(ON) typ. with low gate charge. This super junction MOSFET fits the I 21 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and i... See More ⇒

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Detailed specifications: NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, NCE65TF099T, NCE65TF130D, NCE65TF130, NCE65TF130F, IRFB4227, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D, NCE65TF360, NCE65TF360F, NCE6802, NCE6890

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