All MOSFET. NCE65TF180D Datasheet

 

NCE65TF180D Datasheet and Replacement


   Type Designator: NCE65TF180D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO263
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NCE65TF180D Datasheet (PDF)

 ..1. Size:620K  ncepower
 nce65tf180f nce65tf180 nce65tf180d.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 180 m DS(ON) MAXwith low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion,

 ..2. Size:1721K  ncepower
 nce65tf180d.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i

 ..3. Size:618K  ncepower
 nce65tf180d nce65tf180 nce65tf180f.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 160 m DS(ON) typ.with low gate charge. This super junction MOSFET fits the ID 21 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion

 4.1. Size:1721K  ncepower
 nce65tf180f.pdf pdf_icon

NCE65TF180D

NCE65TF180D,NCE65TF180,NCE65TF180FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 180 mDS(ON) typ.with low gate charge. This super junction MOSFET fits theI 21 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and i

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK7P65W | SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SFFX054Z

Keywords - NCE65TF180D MOSFET datasheet

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