Справочник MOSFET. FDD16AN08A0

 

FDD16AN08A0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD16AN08A0
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для FDD16AN08A0

 

 

FDD16AN08A0 Datasheet (PDF)

 ..1. Size:242K  fairchild semi
 fdd16an08a0.pdf

FDD16AN08A0 FDD16AN08A0

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

 ..2. Size:2944K  fairchild semi
 fdd16an08a0 f085 fdd16an08 f085.pdf

FDD16AN08A0 FDD16AN08A0

October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil

 ..3. Size:239K  fairchild semi
 fdd16an08a0 nf054.pdf

FDD16AN08A0 FDD16AN08A0

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

 9.1. Size:1043K  fairchild semi
 fdd1600n10alz.pdf

FDD16AN08A0 FDD16AN08A0

January 2014FDD1600N10ALZN-Channel PowerTrench MOSFET100 V, 6.8 A, 160 mFeatures Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 Alored to minimize the on-state resistance and maintain s

 9.2. Size:836K  fairchild semi
 fdd1600n10alzd.pdf

FDD16AN08A0 FDD16AN08A0

November 2013FDD1600N10ALZD BoostPak (N-Channel PowerTrench MOSFET + Diode)100 V, 6.8 A, 160 mFeatures Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- RDS(on) = 175 m (Typ.) @ VGS = 5.0 V, ID = 2.1 Amize the on-state resistance whil

 9.3. Size:1148K  onsemi
 fdd1600n10alz.pdf

FDD16AN08A0 FDD16AN08A0

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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