FDD16AN08A0 Datasheet. Specs and Replacement

Type Designator: FDD16AN08A0  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO252 DPAK

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FDD16AN08A0 datasheet

 ..1. Size:242K  fairchild semi
fdd16an08a0.pdf pdf_icon

FDD16AN08A0

May 2002 FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing... See More ⇒

 ..2. Size:2944K  fairchild semi
fdd16an08a0 f085 fdd16an08 f085.pdf pdf_icon

FDD16AN08A0

October 2008 FDD16AN08A0_F085 N-Channel UltraFET Trench MOSFET 75V, 50A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil... See More ⇒

 ..3. Size:239K  fairchild semi
fdd16an08a0 nf054.pdf pdf_icon

FDD16AN08A0

May 2002 FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing... See More ⇒

 9.1. Size:1043K  fairchild semi
fdd1600n10alz.pdf pdf_icon

FDD16AN08A0

January 2014 FDD1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 6.8 A, 160 m Features Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A lored to minimize the on-state resistance and maintain s... See More ⇒

Detailed specifications: STU10N10, FDD10AN06A0, FDD10N20LZ, STU10L01, FDD120AN15A0, FDD13AN06A0, FDD13AN06A0F085, FDD14AN06LA0F085, RFP50N06, FDD16AN08A0F085, FDD18N20LZ, STU102S, FDD20AN06A0F085, FDD24AN06LA0F085, FDD2572, FDD2572F085, FDD2582

Keywords - FDD16AN08A0 MOSFET specs

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