FDD5N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD5N50F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток (Uds): 500 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Максимально допустимый постоянный ток стока (Id): 3.5 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 1.55 Ohm
Тип корпуса: TO252, DPAK
FDD5N50F Datasheet (PDF)
1.1. fdd5n50f.pdf 
Size:752K _fairchild_semi
December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has
3.1. fdd5n50nz.pdf Size:548K _fairchild_semi
November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5Ω Features Description • RDS(on) = 1.38Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been especially
3.2. fdd5n50.pdf Size:503K _fairchild_semi
December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4Ω Features Description • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 11nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced technology has been especiall
3.3. fdd5n50nzf.pdf Size:564K _fairchild_semi
November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. • Low Crss ( Typ. 4pF) This advance technology has been esp
3.4. fdd5n50u.pdf Size:645K _fairchild_semi
December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 11nC) DOMS technology. • Low Crss ( Typ. 5pF) This advance technology h
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
