All MOSFET. FDD5N50F Datasheet

 

FDD5N50F MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD5N50F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.55 Ohm

Package: TO252 DPAK

FDD5N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD5N50F Datasheet (PDF)

0.1. fdd5n50f.pdf Size:752K _fairchild_semi

FDD5N50F
FDD5N50F

December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has

7.1. fdd5n50nz.pdf Size:548K _fairchild_semi

FDD5N50F
FDD5N50F

November 2009UniFET-IITMFDD5N50NZN-Channel MOSFET 500V, 4A, 1.5Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been especially

7.2. fdd5n50.pdf Size:503K _fairchild_semi

FDD5N50F
FDD5N50F

December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especiall

 7.3. fdd5n50nzf.pdf Size:564K _fairchild_semi

FDD5N50F
FDD5N50F

November 2009UniFET-IITMFDD5N50NZFN-Channel MOSFET 500V, 3.7A, 1.75Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 9nC)stripe, DMOS technology. Low Crss ( Typ. 4pF)This advance technology has been esp

7.4. fdd5n50u.pdf Size:645K _fairchild_semi

FDD5N50F
FDD5N50F

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology h

Datasheet: FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , FDD5810_F085 , FDD5N50 , 2SK4106 , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , STT03N20 , FDD6635 .

 

 
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