SUP90142E datasheet, подбор замены

 ..1. Size:150K  vishay
 sup90142e.pdf 

SUP90142E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES TO-220AB ThunderFET power MOSFET Tuned for the lowest RDS - Qoss FOM Maximum 175 C junction temperature 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S S D G Top View APPLICATIONS D Power suppl

 9.1. Size:76K  vishay
 sum90n06-5m0p sup90n06-5m0p.pdf 

SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 60 0.005 at VGS = 10 V RoHS 90d 105 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial TO-220AB OR-ing D G G

 9.2. Size:178K  vishay
 sup90n04-3m3p.pdf 

SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0033 at VGS = 10 V TrenchFET Power MOSFET 90 40 87 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 90 Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply

 9.3. Size:83K  vishay
 sup90n03.pdf 

New Product SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0029 at VGS = 10 V 90 RoHS 30 82 nC COMPLIANT 0.0033 at VGS = 4.5 V 90 APPLICATIONS OR-ing Server TO-220AB DC/DC D G DRAIN connected to TAB G D S S Top View

 9.4. Size:172K  vishay
 sup90n08-6m8p.pdf 

SUP90N08-6m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 75 0.0068 at VGS = 10 V RoHS 90d 75 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-220

 9.5. Size:184K  vishay
 sup90n03-03.pdf 

SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0029 at VGS = 10 V 90 30 82 nC 0.0033 at VGS = 4.5 V 90 APPLICATIONS TO-220AB OR-ing D Server DC/DC G DRAIN connected to TAB S G

 9.6. Size:156K  vishay
 sup90n08-4m8p.pdf 

SUP90N08-4m8P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS COMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested 90d 75 105 0.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC 90d APPLICATIONS Power Supply - Half-Bridge TO-220AB - S

 9.7. Size:149K  vishay
 sup90p06-09l.pdf 

SUP90P06-09L Vishay Siliconix P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)c Compliant to RoHS Directive 2002/95/EC RoHS 0.0093 at VGS = - 10 V - 90 COMPLIANT - 60 0.0118 at VGS = - 4.5 V - 90 APPLICATIONS DC/DC Primary Switch TO-220AB S G Drain connected to Tab G D S Top View D O

 9.8. Size:180K  vishay
 sup90n08-8m2p.pdf 

SUP90N08-8m2P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature 75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested 90d 58 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-220AB APPLICATIONS Power S

 9.9. Size:173K  vishay
 sup90n15-18p.pdf 

SUP90N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.018 at VGS = 10 V RoHS 150 90d 64 COMPLIANT 100 % Rg and UIS Tested APPLICATIONS Primary Side Switch Industrial TO-220AB D G G D S S Top View Ordering Informatio

 9.10. Size:166K  vishay
 sup90n10-8m8p.pdf 

SUP90N10-8m8P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature RoHS 0.0088 at VGS = 10 V 100 COMPLIANT 90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply - Secondary Synchronous Recti

 9.11. Size:171K  vishay
 sup90n08.pdf 

SUP90N08-8m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature 75 0.0082 at VGS = 10 V RoHS 90d 58 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial TO-220AB D G G D S S Top

 9.12. Size:62K  vishay
 sup90n06-05l.pdf 

SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY FEATURES V(BR)DSS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature 0.0049 @ VGS = 10 V a 60 90 a 60 90 0.0055 @ VGS = 4.5 V APPLICATIONS D Automotive Such As - High-Side Switch - Motor Drives - 12-V Battery D Synchronous Rectification TO-220AB D G

 9.13. Size:152K  vishay
 sup90n06-6m0p.pdf 

SUP90N06-6m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 60 0.006 at VGS = 10 V RoHS 90d 78.5 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-22

 9.14. Size:176K  vishay
 sup90n08-7m7p.pdf 

SUP90N08-7m7P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0077 at VGS = 10 V 75 RoHS 90d 69 COMPLIANT APPLICATIONS Synchronous Rectification TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Information SUP90N08-7m7P-E3 (Lead (P

 9.15. Size:150K  vishay
 sup90n06.pdf 

SUP90N06-6m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 60 0.006 at VGS = 10 V RoHS 90d 78.5 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-22

 9.16. Size:172K  vishay
 sup90n15.pdf 

SUP90N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.018 at VGS = 10 V RoHS 150 90d 64 COMPLIANT 100 % Rg and UIS Tested APPLICATIONS Primary Side Switch Industrial TO-220AB D G G D S S Top View Ordering Informatio

 9.17. Size:211K  inchange semiconductor
 sup90n10-8m8p.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP90N10-8M8P FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply - Secondary Synchronous Rectification Industrial Primary Switch ABSOLUTE MAXIMUM RATINGS(T =25 ) a