SUP90142E PDF and Equivalents Search

 

SUP90142E PDF Specs and Replacement


   Type Designator: SUP90142E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0152 Ohm
   Package: TO-220AB
 

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SUP90142E PDF Specs

 ..1. Size:150K  vishay
sup90142e.pdf pdf_icon

SUP90142E

SUP90142E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES TO-220AB ThunderFET power MOSFET Tuned for the lowest RDS - Qoss FOM Maximum 175 C junction temperature 100 % Rg and UIS tested Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S S D G Top View APPLICATIONS D Power suppl... See More ⇒

 9.1. Size:76K  vishay
sum90n06-5m0p sup90n06-5m0p.pdf pdf_icon

SUP90142E

SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 60 0.005 at VGS = 10 V RoHS 90d 105 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial TO-220AB OR-ing D G G ... See More ⇒

 9.2. Size:178K  vishay
sup90n04-3m3p.pdf pdf_icon

SUP90142E

SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0033 at VGS = 10 V TrenchFET Power MOSFET 90 40 87 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 90 Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply... See More ⇒

 9.3. Size:83K  vishay
sup90n03.pdf pdf_icon

SUP90142E

New Product SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0029 at VGS = 10 V 90 RoHS 30 82 nC COMPLIANT 0.0033 at VGS = 4.5 V 90 APPLICATIONS OR-ing Server TO-220AB DC/DC D G DRAIN connected to TAB G D S S Top View... See More ⇒

Detailed specifications: SQS481ENW , SQS482ENW , SQS484ENW , SQSA80ENW , SUD08P06-155L-GE3 , SUD80460E , SUM70060E , SUP10250E , IRFB4227 , TN2404K , TN2404KL , 10N60L-TA3-T , 10N60G-TA3-T , 10N60L-TF3-T , 10N60G-TF3-T , 10N60L-TF1-T , 10N60G-TF1-T .

Keywords - SUP90142E MOSFET specs

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