All MOSFET. SUP90142E Datasheet

 

SUP90142E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP90142E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0152 Ohm
   Package: TO-220AB

 SUP90142E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP90142E Datasheet (PDF)

 ..1. Size:150K  vishay
sup90142e.pdf pdf_icon

SUP90142E
SUP90142E

SUP90142Ewww.vishay.comVishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESTO-220AB ThunderFET power MOSFET Tuned for the lowest RDS - Qoss FOM Maximum 175 C junction temperature 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912SSDGTop View APPLICATIONSD Power suppl

 9.1. Size:76K  vishay
sum90n06-5m0p sup90n06-5m0p.pdf pdf_icon

SUP90142E
SUP90142E

SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG

 9.2. Size:178K  vishay
sup90n04-3m3p.pdf pdf_icon

SUP90142E
SUP90142E

SUP90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = 10 V TrenchFET Power MOSFET9040 87 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V90 Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Power Supply

 9.3. Size:83K  vishay
sup90n03.pdf pdf_icon

SUP90142E
SUP90142E

New ProductSUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0029 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0033 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerTO-220AB DC/DCDGDRAIN connected to TABG D S STop View

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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