All MOSFET. SUP90142E Datasheet

 

SUP90142E MOSFET. Datasheet pdf. Equivalent

Type Designator: SUP90142E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 375 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 58 nC

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 280 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0152 Ohm

Package: TO-220AB

SUP90142E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP90142E Datasheet (PDF)

..1. sup90142e.pdf Size:150K _vishay

SUP90142E SUP90142E

SUP90142Ewww.vishay.comVishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESTO-220AB ThunderFET power MOSFET Tuned for the lowest RDS - Qoss FOM Maximum 175 C junction temperature 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912SSDGTop View APPLICATIONSD Power suppl

9.1. sum90n06-5m0p sup90n06-5m0p.pdf Size:76K _vishay

SUP90142E SUP90142E

SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG

9.2. sup90n03.pdf Size:83K _vishay

SUP90142E SUP90142E

New ProductSUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0029 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0033 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerTO-220AB DC/DCDGDRAIN connected to TABG D S STop View

 9.3. sup90n08-7m7p.pdf Size:176K _vishay

SUP90142E SUP90142E

SUP90N08-7m7PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0077 at VGS = 10 V75 RoHS90d 69COMPLIANTAPPLICATIONS Synchronous RectificationTO-220ABD DRAIN connected to TABG G D STop ViewS Ordering Information: SUP90N08-7m7P-E3 (Lead (P

9.4. sup90n08-4m8p.pdf Size:156K _vishay

SUP90142E SUP90142E

SUP90N08-4m8PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHSCOMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested90d75 1050.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC90dAPPLICATIONS Power Supply- Half-BridgeTO-220AB- S

 9.5. sup90n04-3m3p.pdf Size:178K _vishay

SUP90142E SUP90142E

SUP90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = 10 V TrenchFET Power MOSFET9040 87 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V90 Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Power Supply

9.6. sup90n15-18p.pdf Size:173K _vishay

SUP90142E SUP90142E

SUP90N15-18PVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.018 at VGS = 10 V RoHS15090d 64COMPLIANT 100 % Rg and UIS TestedAPPLICATIONS Primary Side Switch IndustrialTO-220AB D G G D S S Top View Ordering Informatio

9.7. sup90n10-8m8p.pdf Size:166K _vishay

SUP90142E SUP90142E

SUP90N10-8m8PVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0088 at VGS = 10 V100 COMPLIANT 90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECTO-220AB APPLICATIONS Power Supply- Secondary Synchronous Recti

9.8. sup90n06-05l.pdf Size:62K _vishay

SUP90142E SUP90142E

SUP90N06-05LNew ProductVishay SiliconixN-Channel 60-V (D-S) 175_C MOSFETPRODUCT SUMMARYFEATURESV(BR)DSS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 175_C Maximum Junction Temperature0.0049 @ VGS = 10 Va60 90 a60 900.0055 @ VGS = 4.5 VAPPLICATIONSD Automotive Such As- High-Side Switch- Motor Drives- 12-V BatteryD Synchronous RectificationTO-220ABDG

9.9. sup90n06-6m0p.pdf Size:152K _vishay

SUP90142E SUP90142E

SUP90N06-6m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature60 0.006 at VGS = 10 V RoHS90d 78.5 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-22

9.10. sup90n08.pdf Size:171K _vishay

SUP90142E SUP90142E

SUP90N08-8m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V RoHS90d 58 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB DGG D S STop

9.11. sup90n06.pdf Size:150K _vishay

SUP90142E SUP90142E

SUP90N06-6m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature60 0.006 at VGS = 10 V RoHS90d 78.5 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-22

9.12. sup90n03-03.pdf Size:184K _vishay

SUP90142E SUP90142E

SUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0029 at VGS = 10 V 9030 82 nC0.0033 at VGS = 4.5 V 90APPLICATIONSTO-220AB OR-ingD Server DC/DCGDRAIN connected to TABSG

9.13. sup90p06-09l.pdf Size:149K _vishay

SUP90142E SUP90142E

SUP90P06-09LVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)c Compliant to RoHS Directive 2002/95/ECRoHS0.0093 at VGS = - 10 V - 90COMPLIANT - 600.0118 at VGS = - 4.5 V - 90APPLICATIONS DC/DC Primary SwitchTO-220AB SGDrain connected to TabG D S Top View DO

9.14. sup90n15.pdf Size:172K _vishay

SUP90142E SUP90142E

SUP90N15-18PVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.018 at VGS = 10 V RoHS15090d 64COMPLIANT 100 % Rg and UIS TestedAPPLICATIONS Primary Side Switch IndustrialTO-220AB D G G D S S Top View Ordering Informatio

9.15. sup90n08-6m8p.pdf Size:172K _vishay

SUP90142E SUP90142E

SUP90N08-6m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature75 0.0068 at VGS = 10 V RoHS90d 75 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-220

9.16. sup90n08-8m2p.pdf Size:180K _vishay

SUP90142E SUP90142E

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

9.17. sup90n10-8m8p.pdf Size:211K _inchange_semiconductor

SUP90142E SUP90142E

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUP90N10-8M8PFEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower Supply- Secondary Synchronous RectificationIndustrialPrimary SwitchABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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