Справочник MOSFET. FDD8444

 

FDD8444 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD8444
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 153 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 145 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: TO252 DPAK
     - подбор MOSFET транзистора по параметрам

 

FDD8444 Datasheet (PDF)

 ..1. Size:311K  fairchild semi
fdd8444 f085.pdfpdf_icon

FDD8444

October 2010FDD8444_F085N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch

 ..2. Size:309K  fairchild semi
fdd8444.pdfpdf_icon

FDD8444

June 2007FDD8444tmN-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec

 ..3. Size:467K  onsemi
fdd8444.pdfpdf_icon

FDD8444

March 2015FDD8444N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur

 ..4. Size:287K  inchange semiconductor
fdd8444.pdfpdf_icon

FDD8444

isc N-Channel MOSFET Transistor FDD8444FEATURESDrain Current : I =155A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =5.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424HF085 , STT02N10 , AON7408 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 , FDD8451 , FDD8453LZ .

History: 2SK3699-01MR | BSC032N03SG | HGP035N08AL | BF964S | IPP60R099C6 | IPN80R2K4P7 | SI7100DN

 

 
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