Справочник MOSFET. FDD8451

 

FDD8451 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD8451
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: TO252 DPAK
     - подбор MOSFET транзистора по параметрам

 

FDD8451 Datasheet (PDF)

 ..1. Size:225K  fairchild semi
fdd8451.pdfpdf_icon

FDD8451

May 2009FDD8451tmN-Channel PowerTrench MOSFET 40V, 28A, 24mFeatures General Description Max rDS(on) 24m at VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) 30m at VGS = 4.5V, ID = 7A either synchronous or conventional switching PWM controllers. It has been optimized

 ..2. Size:288K  inchange semiconductor
fdd8451.pdfpdf_icon

FDD8451

isc N-Channel MOSFET Transistor FDD8451FEATURESDrain Current : I =28A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 8.1. Size:411K  fairchild semi
fdd8453lz f085.pdfpdf_icon

FDD8451

Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi

 8.2. Size:277K  fairchild semi
fdd8453lz.pdfpdf_icon

FDD8451

September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1686 | IRF511 | MEE2348-G | SM2601PSC | NTMFS4833NS | FNK10N25B | 2SK2882

 

 
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