All MOSFET. FDD8451 Datasheet

 

FDD8451 Datasheet and Replacement


   Type Designator: FDD8451
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO252 DPAK
 

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FDD8451 Datasheet (PDF)

 ..1. Size:225K  fairchild semi
fdd8451.pdf pdf_icon

FDD8451

May 2009FDD8451tmN-Channel PowerTrench MOSFET 40V, 28A, 24mFeatures General Description Max rDS(on) 24m at VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) 30m at VGS = 4.5V, ID = 7A either synchronous or conventional switching PWM controllers. It has been optimized

 ..2. Size:288K  inchange semiconductor
fdd8451.pdf pdf_icon

FDD8451

isc N-Channel MOSFET Transistor FDD8451FEATURESDrain Current : I =28A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 8.1. Size:411K  fairchild semi
fdd8453lz f085.pdf pdf_icon

FDD8451

Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi

 8.2. Size:277K  fairchild semi
fdd8453lz.pdf pdf_icon

FDD8451

September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro

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