FDD8451 PDF and Equivalents Search

 ..1. Size:225K  fairchild semi
 fdd8451.pdf

May 2009 FDD8451 tm N-Channel PowerTrench MOSFET 40V, 28A, 24m Features General Description Max rDS(on) 24m at VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) 30m at VGS = 4.5V, ID = 7A either synchronous or conventional switching PWM controllers. It has been optimized... See More ⇒

 ..2. Size:288K  inchange semiconductor
 fdd8451.pdf

isc N-Channel MOSFET Transistor FDD8451 FEATURES Drain Current I =28A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =24m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒

 8.1. Size:411K  fairchild semi
 fdd8453lz f085.pdf

Aug 2012 FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typical Semiconductor s advanced PowerTrench process that RoHS Compliant has been especially tailored to mi... See More ⇒

 8.2. Size:277K  fairchild semi
 fdd8453lz.pdf

September 2007 FDD8453LZ tm N-Channel PowerTrench MOSFET 40V, 50A, 6.7m Features General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13A been especially tailored to minimize the on-state resistance and HBM ESD pro... See More ⇒

 8.3. Size:417K  onsemi
 fdd8453lz-f085.pdf

FDD8453LZ-F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15A General Description This N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13A Semiconductor s advanced PowerTrench process that HBM ESD protection level > 7kv typical has been especially tailored to minimize the RoHS Compliant on-s... See More ⇒

 8.4. Size:288K  inchange semiconductor
 fdd8453lz.pdf

isc N-Channel MOSFET Transistor FDD8453LZ FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =6.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒