FDD8451
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD8451
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
TO252
DPAK
FDD8451
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD8451
Datasheet (PDF)
..1. Size:225K fairchild semi
fdd8451.pdf 
May 2009FDD8451tmN-Channel PowerTrench MOSFET 40V, 28A, 24mFeatures General Description Max rDS(on) 24m at VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) 30m at VGS = 4.5V, ID = 7A either synchronous or conventional switching PWM controllers. It has been optimized
..2. Size:288K inchange semiconductor
fdd8451.pdf
isc N-Channel MOSFET Transistor FDD8451FEATURESDrain Current : I =28A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
8.1. Size:411K fairchild semi
fdd8453lz f085.pdf
Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi
8.2. Size:277K fairchild semi
fdd8453lz.pdf
September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro
8.3. Size:417K onsemi
fdd8453lz-f085.pdf
FDD8453LZ-F085N-Channel Power Trench MOSFET40V, 50A, 6.5mFeatures Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral DescriptionThis N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13ASemiconductors advanced PowerTrench process that HBM ESD protection level > 7kv typicalhas been especially tailored to minimize the RoHS Complianton-s
8.4. Size:288K inchange semiconductor
fdd8453lz.pdf
isc N-Channel MOSFET Transistor FDD8453LZFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
