FDG327NZ datasheet, подбор замены

 ..1. Size:492K  fairchild semi
 fdg327nz.pdf 

August 2008 FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It has been

 7.1. Size:79K  fairchild semi
 fdg327n.pdf 

October 2001 FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It h

 7.2. Size:193K  onsemi
 fdg327n.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:76K  fairchild semi
 fdg328p.pdf 

October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 V a rugged gate version of Fairchild Semiconductor s RDS(ON) = 0.210 @ VGS = 2.5 V advanced PowerTrench process. It has been optimized for power management a

 9.2. Size:69K  fairchild semi
 fdg326p.pdf 

January 2001 FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 1.5 A, 20 V. RDS(ON) = 140 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 180 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 250 m @ VGS = 1.

 9.3. Size:77K  fairchild semi
 fdg329n.pdf 

October 2001 FDG329N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 115 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use Fast sw

 9.4. Size:78K  onsemi
 fdg328p.pdf 

October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 V a rugged gate version of Fairchild Semiconductor s RDS(ON) = 0.210 @ VGS = 2.5 V advanced PowerTrench process. It has been optimized for power management a