FDG327NZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDG327NZ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.2
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
SC70
FDG327NZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDG327NZ
Datasheet (PDF)
..1. Size:492K fairchild semi
fdg327nz.pdf 
August 2008 FDG327NZ20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It has been
7.1. Size:79K fairchild semi
fdg327n.pdf
October 2001FDG327N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It h
7.2. Size:193K onsemi
fdg327n.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:76K fairchild semi
fdg328p.pdf
October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a
9.2. Size:69K fairchild semi
fdg326p.pdf
January 2001FDG326PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 1.5 A, 20 V. RDS(ON) = 140 m @ VGS = 4.5 VFairchilds advanced low voltage PowerTrench process.RDS(ON) = 180 m @ VGS = 2.5 VIt has been optimized for battery power managementRDS(ON) = 250 m @ VGS = 1.
9.3. Size:77K fairchild semi
fdg329n.pdf
October 2001FDG329N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 115 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized use Fast sw
9.4. Size:78K onsemi
fdg328p.pdf
October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a
Datasheet: STS6409
, FDD8896
, STS6308
, FDD8896F085
, STS4622
, FDD8N50NZ
, FDG1024NZ
, FDG327N
, 8N60
, FDG328P
, FDG330P
, FDG332PZ
, FDG410NZ
, FDG6301NF085
, FDG6306P
, FDG6308P
, FDG6316P
.
