FDG6316P - описание и поиск аналогов

December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 0.7 A, 12 V. RDS(ON) = 270 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 360 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 650 m @

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDG6316P www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2

May 2009 FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 550 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use Gate-So

January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode 0.5 A, 20 V. RDS(ON) = 780 m @ VGS = 4.5 V MOSFET are produced using Fairchild Semiconductor s RDS(ON) = 1200 m @ VGS = 2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This

January 2003 FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode -0.5A, -20V. rDS(ON) = 780m (Max)@ VGS = -4.5 V MOSFET are produced using Fairchild Semiconductor s rDS(ON) = 1200m (Max) @ VGS = -2.5 V especially tailored to minimize on-state resistance. This Very low level gate drive requirements allowing

FDG6317NZ MOSFET Dual, N-Channel, POWERTRENCH) 20 V, 2.1 A, 550 mW General Description www.onsemi.com This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either VDSS RDS(ON) MAX ID MAX synchronous or conventional switching PWM controllers. It has been 20 V 550 mW 2.1 A optimized use in small switching regulators, p