FDG6316P PDF and Equivalents Search

 ..1. Size:149K  fairchild semi
 fdg6316p.pdf

December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 0.7 A, 12 V. RDS(ON) = 270 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 360 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 650 m @ ... See More ⇒

 ..2. Size:265K  onsemi
 fdg6316p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:2117K  cn vbsemi
 fdg6316p.pdf

FDG6316P www.VBsemi.tw Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET - 20 2.7 nC 0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SC-70=-6 S1 S2 S1 1 6 D1 G1 G2 G1 2 5 G2 ... See More ⇒

 8.1. Size:344K  fairchild semi
 fdg6317nz.pdf

May 2009 FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 550 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use Gate-So... See More ⇒

 8.2. Size:123K  fairchild semi
 fdg6318p.pdf

January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode 0.5 A, 20 V. RDS(ON) = 780 m @ VGS = 4.5 V MOSFET are produced using Fairchild Semiconductor s RDS(ON) = 1200 m @ VGS = 2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This... See More ⇒

 8.3. Size:159K  fairchild semi
 fdg6318pz.pdf

January 2003 FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode -0.5A, -20V. rDS(ON) = 780m (Max)@ VGS = -4.5 V MOSFET are produced using Fairchild Semiconductor s rDS(ON) = 1200m (Max) @ VGS = -2.5 V especially tailored to minimize on-state resistance. This Very low level gate drive requirements allowing... See More ⇒

 8.4. Size:233K  onsemi
 fdg6317nz.pdf

FDG6317NZ MOSFET Dual, N-Channel, POWERTRENCH) 20 V, 2.1 A, 550 mW General Description www.onsemi.com This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either VDSS RDS(ON) MAX ID MAX synchronous or conventional switching PWM controllers. It has been 20 V 550 mW 2.1 A optimized use in small switching regulators, p... See More ⇒