FDG6316P Datasheet and Replacement

December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 0.7 A, 12 V. RDS(ON) = 270 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 360 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 650 m @

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDG6316Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.155 at VGS = - 4.5V - 1.8 TrenchFET Power MOSFET- 20 2.7 nC0.235 at VGS = - 2.5 V - 1.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSC-70=-6S1 S2S1 1 6 D1G1 G2G1 2 5 G2

May 2009FDG6317NZDual 20v N-Channel PowerTrench MOSFETGeneral Description FeaturesThis dual N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 550 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized use Gate-So

January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode 0.5 A, 20 V. RDS(ON) = 780 m @ VGS = 4.5 V MOSFET are produced using Fairchild Semiconductors RDS(ON) = 1200 m @ VGS = 2.5 V advanced PowerTrench process that has beenespecially tailored to minimize on-state resistance. This

January 2003 FDG6318PZ Dual P-Channel, Digital FETGeneral Description FeaturesThese dual P-Channel logic level enhancement mode -0.5A, -20V. rDS(ON) = 780m (Max)@ VGS = -4.5 VMOSFET are produced using Fairchild Semiconductors rDS(ON) = 1200m (Max) @ VGS = -2.5 Vespecially tailored to minimize on-state resistance. This Very low level gate drive requirements allowing

FDG6317NZMOSFET Dual, N-Channel,POWERTRENCH)20 V, 2.1 A, 550 mWGeneral Descriptionwww.onsemi.comThis dual N-Channel MOSFET has been designed specifically toimprove the overall efficiency of DC/DC converters using eitherVDSS RDS(ON) MAX ID MAXsynchronous or conventional switching PWM controllers. It has been20 V 550 mW 2.1 Aoptimized use in small switching regulators, p