November 1998 FDG6320C Dual N & P Channel Digital FET General Description FeaturesThese dual N & P-Channel logic level enhancement modeN-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,field effect transistors are produced using Fairchild'sRDS(ON) = 5.0 @ VGS= 2.7 V.proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to mi

June 2008 FDG6322C Dual N & P Channel Digital FET General Description FeaturesThese dual N & P-Channel logic level enhancement modeN-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,field effect transistors are produced using Fairchild'sRDS(ON) = 5.0 @ VGS= 2.7 V.proprietary, high cell density, DMOS technology. This veryhigh density process is especially tailored to minimiz

November 1998 FDG6321C Dual N & P Channel Digital FET General Description FeaturesThese dual N & P-Channel logic level enhancement mode fieldN-Ch 0.50 A, 25 V, RDS(ON) = 0.45 @ VGS= 4.5V.effect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.60 @ VGS= 2.7 V.high cell density, DMOS technology. This very high densityprocess is especially tailored to mi

FDG6322C Features Dual N & P Channel Digital FETN-Ch 0.22 A, 25 V, RDS(ON) = 4.0 @ VGS= 4.5 V,RDS(ON) = 5.0 @ VGS= 2.7 V. General DescriptionP-Ch -0.41 A,-25V, RDS(ON) = 1.1 @ VGS= -4.5V,These dual N & P-Channel logic level enhancement mode RDS(ON) = 1.5 @ VGS= -2.7V.field effect transistors are produced using ON Semiconductor's proprietary, high cell densit

Digital FET, Dual N & PChannelFDG6321CGeneral DescriptionThese dual N & P-Channel logic level enhancement mode fieldwww.onsemi.comeffect transistors are produced using ON Semiconductors proprietary,high cell density, DMOS technology. This very high density process isS2especially tailored to minimize on-state resistance. This device hasG2D1been designed especially on l