Справочник MOSFET. FDMA507PZ

 

FDMA507PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMA507PZ
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: MICROFET

 Аналог (замена) для FDMA507PZ

 

 

FDMA507PZ Datasheet (PDF)

 ..1. Size:302K  fairchild semi
 fdma507pz.pdf

FDMA507PZ FDMA507PZ

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist

 9.1. Size:283K  fairchild semi
 fdma520pz.pdf

FDMA507PZ FDMA507PZ

April 2009FDMA520PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.3A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5AIt features a MOSFET with low o

 9.2. Size:787K  fairchild semi
 fdma530pz.pdf

FDMA507PZ FDMA507PZ

June 2011tmFDMA530PZSingle P-Channel PowerTrench MOSFET 30V, 6.8A, 35mFeatures General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0Aapplications . It features a MOSFET with low on-st

 9.3. Size:306K  fairchild semi
 fdma510pz.pdf

FDMA507PZ FDMA507PZ

April 2009FDMA510PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low o

 9.4. Size:314K  onsemi
 fdma530pz.pdf

FDMA507PZ FDMA507PZ

MOSFET - Power, SingleP-Channel, POWERTRENCH)-30 V, -6.8 A, 35 mWFDMA530PZGeneral DescriptionThis device is designed specifically for battery charge or loadwww.onsemi.comswitching in cellular handset and other ultraportable applications . Itfeatures a MOSFET with low on-state resistance.The WDFN6 (MicroFET 2 2) package offers exceptional thermalBottom Drain Contactperfo

 9.5. Size:378K  onsemi
 fdma510pz.pdf

FDMA507PZ FDMA507PZ

FDMA510PZSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mGeneral DescriptionFeaturesThis device is designed specifically for battery charge or load Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low on-state resista

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