FDMA507PZ - аналоги, параметры транзистора - Справочник транзисторов

FDMA507PZ даташит

..1. Size:302K fairchild semi
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May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist

9.1. Size:283K fairchild semi
fdma520pz.pdf pdf_icon

April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o

9.2. Size:787K fairchild semi
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June 2011 tm FDMA530PZ Single P-Channel PowerTrench MOSFET 30V, 6.8A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0A applications . It features a MOSFET with low on-st

9.3. Size:306K fairchild semi
fdma510pz.pdf pdf_icon

April 2009 FDMA510PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6A It features a MOSFET with low o